journal article·1994-11

Low-temperature plasma-assisted oxidation of Si: a new approach for creation of device-quality SiSiO2 interfaces with deposited dielectrics for applications in Si MOSFET technologies

G. Lucovsky, T. Yasuda, Y. Ma, S. Hattangady, V. Misra, X.-L. Xu, B. Hornung, J.J. Wortman

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Abstract

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Research context

OpenAlex topics: Semiconductor materials and devices · Advanced ceramic materials synthesis · Silicon Nanostructures and Photoluminescence

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References (15)

Show source-provided references
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6. Lucovsky · Jpn. J. Appl. Phys. · 1992 · 31 · 438710.1143/JJAP.31.4387 ↗
7. Bjorkman · J. Vac Sci. Technol. · 1993 · B11 · 152110.1116/1.586963 ↗
8. Misra · 1993
9. Kern · J. Electrochem. Soc. · 1990 · 137 · 188710.1149/1.2086825 ↗
10. MOS Physics and Technology
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12. Morita · 1993 · 199
13. J.R. Hauser and J.J. Wortman, unpublished results.
14. Ma · J. Vac. Sci. Technol. · 1993 · B11 · 153310.1116/1.586965 ↗
15. Y. Ma and G. Lucovsky, unpublished results.