Helium effusion, diffusion and precipitation as a probe of microstructure in hydrogenated amorphous silicon
Source abstract
Abstract
The effusion of implanted helium was studied for doped and undoped radio frequency plasma-deposited a-Si:H films as well as for Si:H films deposited by other techniques. The results suggest that the observed helium diffusion and precipitation effects give information on the material microstructure.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (13)
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