journal article·1993-12

Polysilicon produced by excimer (ArF) laser crystallisation and low-temperature (600°C) furnace crystallisation of hydrogenated amorphous silicon (a-Si:H)

T.E. Dyer, J.M. Marshall, W. Pickin, A.R. Hepburn, J.F. Davies

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (10)

Show source-provided references
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6. Dyer · 1993 · 283 · 691
7. Nakazawa · J. Appl. Phys. · 1990 · 68 · 102910.1063/1.346740 ↗
8. Harbeke · J. Electrochem. Soc. · 1990 · 137 · 69610.1149/1.2086534 ↗
9. Sameshima · J. Appl. Phys. · 1991 · 70 · 128110.1063/1.349584 ↗
10. Zanzucchi · 1984 · 21B