Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2
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OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Advanced Surface Polishing Techniques
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References (18)
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1. F.T. Liou, S.O. Chen, IEEE Trans. Electron Devices ED-31 (1984) 1786
2. Robertson · Appl. Phys. Lett. · 1984 · 44 · 41510.1063/1.94794 ↗
3. Maruyama · J. Appl. Phys. · 1995 · 78 · 391210.1063/1.359908 ↗
4. Tanaka · IEEE Trans. Electron Devices · 1993 · 40 · 2331
5. Suzuki · IEEE Trans. Electron Devices · 1989 · 36 · 114510.1109/16.24360 ↗
6. H. Tanaka, H. Uchida, N. Hirashita, T. Ajioka, in: Proceedings of the International Reliability Physics Symp., 1992. p. 3110.1109/IRPS.1992.363268 ↗
7. Alfonsetti · Advances in X-ray Chemical Analysis Japan · 1995 · 26 · 145
8. Handbook of X-ray Photoelectron spectroscopy, in: J. Chastain (Ed.), Perkin-elmer corporation, Minnesota, 1992
9. Alfonsetti · Thin Solid Films · 1992 · 213 · 15810.1016/0040-6090(92)90276-H ↗
10. Alfonsetti · Appl. Surf. Sci. · 1993 · 70/71 · 22210.1016/0169-4332(93)90431-A ↗
11. E. Hecht, Zajac, Optics, Addison-Wesley, New York, 1973
12. Parrat · Phys. Rev. · 1954 · 95 · 35910.1103/PhysRev.95.359 ↗
13. Névot · Rev. Phys. Appl. · 1980 · 15 · 76110.1051/rphysap:01980001503076100 ↗
14. Lozzi · Surf. Interface Anal. · 1994 · 22 · 19010.1002/sia.740220142 ↗
15. Santucci · J. Non-Cryst. Solids · 1997 · 216 · 15610.1016/S0022-3093(97)00209-3 ↗
16. Santucci · J. Vac. Sci. Technol. A · 1997 · 15 · 90510.1116/1.580730 ↗
17. Sinha · Phys. Rev. B · 1988 · 38 · 229710.1103/PhysRevB.38.2297 ↗
18. Vedpathak · Appl. Phys. Lett. · 1997 · 115 · 311