journal article·1991

Hydrogen diffusion in RF-sputtered a-Ge: H thin films

C.F. de O. Graeff, F.L. Freire, I. Chambouleyron

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Transition Metal Oxide Nanomaterials

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References (9)

Show source-provided references
1. Kinetics of Carrier-Induced Metastable Defect Formation in Hydrogenated Amorphous Silicon
2. Santos · J. Non-Cryst. Solids · 1991 · 128 · 24310.1016/0022-3093(91)90462-F ↗
3. Fang · J. Non-Cryst. Solids · 1980 · 35&36 · 25510.1016/0022-3093(80)90603-1 ↗
4. Staebler-Wronski Effect in Hydrogenated Amorphous Germanium Films
5. Hydrogen Stability in Hydrogenated Amorphous Germanium
6. The Hydrogen Glass Model
7. Tang · Phys. Rev. B · 1990 · 41 · 794510.1103/PhysRevB.41.7945 ↗
8. Long Range Hydrogen Motion, Evolution, and Bonding in a-Si:H and a-Ge:H
9. Crank · 1975