journal article·1991

Kinetics of formation of silicides in a-Si:H/Pd interfaces monitored by in situ ellipsometry and kelvin probe techniques

P. Roca i Cabarrocas, M. Stchakovsky, B. Drevillon, F. Fortuna, H. Bernas

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Ion-surface interactions and analysis · Semiconductor materials and interfaces · Silicon Nanostructures and Photoluminescence

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References (10)

Show source-provided references
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6. Siefert · Phil. Mag. B. · 1986 · 54 · L5710.1080/13642818608239003 ↗
7. Cottereau · Nucl. Inst. and Meth. · 1990 · B45 · 29310.1016/0168-583X(90)90838-L ↗
8. Doolittle · Nucl. Inst. and Meth. · 1985 · B9 · 334
9. Dubois · Surface Science · 1985 · 149 · 13310.1016/S0039-6028(85)80018-2 ↗
10. Viguier · 1987