a-Si:H/a-SiO :H microcavities with a-Si(Er):H active layer

Abstract Fabry–Perot a-Si:H/a-SiOx:H and a-Si(P):H/SnOx microcavities (MCs) with Er-doped a-Si:H active regions were fabricated by plasma-enhanced chemical vapor deposition. A metalorganic compound was used to incorporate erbium into the active a-Si:H layer. The room temperature transmission, reflection and spontaneous emission spectra of the MCs with two and three pairs of layers in distributed Bragg reflectors were measured. An intensity enhancement by two order of magnitude and selective narrowing of the 1.54 μm erbium emission line were observed as compared to the case of a single a-Si(Er):H film deposited on a quartz substrate. A theoretical analysis of the experimental data is given.