Preferential coalescence of nanocrystalline silicon on different film substrates
Source abstract
Abstract
The characteristics of nanocrystalline silicon deposited on different film substrates were studied. Through atomic force microscopy, field emission scanning electron microscopy, Raman scattering and Hall effect measurements, we investigated and compared the morphology, columnar grain size, crystallinity and Hall mobility of nanocrystalline silicon on different film substrates. The mechanisms affecting the characteristics of nanocrystalline silicon deposited to different substrates were studied in detail.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (17)
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