High-field electron drift in a-Si:H
Source abstract
Abstract
Recent high-field measurements of electron drift velocities in hydrogenated amorphous silicon (a-Si:H) are surveyed. The electron drift-mobility depends essentially exponentially upon electric field above 90 K; the characteristic field E0 of the nonlinearity increases approximately linearly with temperature. Models for these high-field measurements are discussed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (15)
Show source-provided references
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