journal article·1996-05

A new deposition parameter to control the carrier drift mobility in a-Si:H

Gautam Ganguly, Akihisa Matsuda

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices

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References (10)

Show source-provided references
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3. Marshall · J. Non-Cryst. Solids · 1989 · 114 · 33910.1016/0022-3093(89)90156-7 ↗
4. Das · Jpn. J. Appl. Phys. · 1991 · 30 · L23910.1143/JJAP.30.L239 ↗
5. Ganguly · 1994 · 336 · 7
6. Ganguly · 1992 · 258 · 39
7. Ganguly · J. Non-Cryst. Solids · 1993 · 164–166 · 3110.1016/0022-3093(93)90485-G ↗
8. Ganguly · Phys. Rev. · 1994 · B49 · 1098610.1103/PhysRevB.49.10986 ↗
9. Ganguly · 1995 · 377
10. Perrin · Jpn. J. Appl. Phys. · 1989 · 28 · 510.1143/JJAP.28.5 ↗