Microstructure and dynamics of hydrogen in a-Si:H detected by nuclear magnetic resonance
Source abstract
Abstract
A proton nuclear magnetic resonance (NMR) study of a-Si:H was carried out on both hydrogen-diluted and non-hydrogen-diluted device quality glow-discharge (GD) a-Si:H films. The main features of the proton spectrum are the previously reported line with a linewidth of a few kHz and a line with a linewidth > 25 kHz. However, the broader line is a superposition of two peaks, rather than a single peak. Spin-lattice relaxation time (T 1 ) measurements of the non-H-diluted a-Si:H indicate that the spectral component with the greatest width ( 80 kHz) relaxes about four times faster than the 35 kHz and the few kHz peaks. T 1 measurements cannot resolve components of the H-diluted a-Si:H spectrum and in that case the deviation from a single Gaussian function fitted to the 35 kHz line is much less. Above room temperature the intensity of the broadest line decreases whereas the narrow peak and a narrower portion of the broad peak increase in intensity. These spectral changes are reversible at temperatures < 200°C. The temperature dependence of the spectra is larger for the non-H-diluted sample. We speculate that the temperature dependence is related to the intensity of the broadest spectral component and that this component may be associated with isolated trapped molecular hydrogen.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
Show source-provided references
1. H. Fritzsche, in: S. Wagner, M. Hack, E.A. Schiff, R. Schropp, I. Shimizu (Eds.), Amorphous and Microcrystalline Silicon Technology, San Francisco, CA, Mater. Res. Soc. Proc. 467 (1997) 19
2. Reimer · Phys. Rev. B · 1981 · 24 · 336010.1103/PhysRevB.24.3360 ↗
3. Carlos · Phys. Rev. B · 1982 · 26 · 360510.1103/PhysRevB.26.3605 ↗
4. Stephen · Mater. Res. Soc. Proc. · 1996 · 420 · 48510.1557/PROC-420-485 ↗
5. R. Arya, A. Catalano, M. Bennett, J. Newton, B. Fieselman, L. Yang, Y.M. Li, R. D’Aiello, in: Proceedings of the 11th EC PVSEC, 1992, p. 199
6. Xu · J. Non-Cryst. Solids · 1996 · 198–200 · 6010.1016/0022-3093(95)00657-5 ↗
7. Han · J. Appl. Phys. · 1996 · 80 · 247510.1063/1.363083 ↗
8. Zafar · Phys. Rev. Lett. · 1991 · 66 · 149310.1103/PhysRevLett.66.1493 ↗
9. Street · Phys. Rev. B · 1986 · 34 · 303010.1103/PhysRevB.34.3030 ↗
10. Z.E. Smith, S. Wagner, in: H. Fritzsche (Ed.), Amorphous Silicon and Related Materials, World Scientific, Singapore, 1989, p. 40910.1142/9789814434157_0014 ↗
11. Conradi · Phys. Rev. B · 1981 · 24 · 228510.1103/PhysRevB.24.2285 ↗
12. Boyce · Phys. Rev. Lett. · 1985 · 54 · 56210.1103/PhysRevLett.54.562 ↗
13. R.E. Norberg, P.A. Fedders, D.J. Leopold, in: M. Hack, E.A. Schiff, M. Powell, A. Matsuda, A. Madan (Eds.), Amorphous Silicon Technology, San Francisco, CA, Mater. Res. Soc. Proc. 420 (1996) 47510.1557/PROC-420-475 ↗
14. Levy · J. Vac. Sci. Technol. A · 1993 · 11 · 19510.1116/1.578701 ↗
15. A.H. Mahan, E.J. Johnson, R.S. Crandall, H.M. Branz, in: M. Hack, E.A. Schiff, A. Madan, M. Powell, A. Matsuda (Eds.), Amorphous Silicon Technology, MRS Symposia Proceedings No. 377, Materials Research Society, Pittsburgh, PA, 1995, p. 41310.1557/PROC-377-413 ↗
16. J. Baugh, D. Han, Q. Wang, Yue Wu, Mater. Res. Soc. Proc., 1999, to be published
17. Yang · Appl. Phys. Lett. · 1993 · 63 · 40010.1063/1.110031 ↗
18. Norberg · J. Non-Cryst. Solids · 1998 · 227–230 · 12410.1016/S0022-3093(98)00267-1 ↗