Structure and optical properties of amorphous silicon oxide thin films with different porosities

Abstract Amorphous silicon oxide thin films were prepared by evaporation of a silicon oxide powder. Samples were prepared under ultrahigh vacuum, under a flow of hydrogen ions or under a molecular hydrogen atmosphere. Two others sets of samples were prepared using deuterium instead of hydrogen. These five groups of samples were then annealed to different temperatures up to 950 °C and were exposed to the ambient air. The samples present different densities and microstructures. The sample prepared under ultrahigh vacuum is dense, hydrogen free and OH-bond free. Samples prepared under atomic hydrogen and deuterium flows contain Si–H and Si–D bonds, respectively, and are OH-bond free. The sample prepared under a molecular hydrogen atmosphere is very similar to that prepared under a molecular deuterium atmosphere. Both samples are porous and contain Si–H bonds and OH-groups coming from the exposure to the air. All the samples show visible photoluminescence attributed to isolated silicon clusters. The photoluminescence intensity increases with thermal annealing post-treatments up to an optimal annealing temperature. This maximum value is equal to 650 °C for the unhydrogenated sample and the sample prepared under an atomic hydrogen flow and to 800 °C for the sample prepared under a molecular hydrogen atmosphere. This difference is correlated to the different microstructures of the samples. Moreover the strongest photoluminescence intensity is obtained for the porous sample.