Light-induced defect creation under intense optical excitation in hydrogenated amorphous silicon

A model of light-induced creation of dangling bonds under intense illumination in hydrogenated amorphous silicon is presented. Numerical calculations on the density of light-induced dangling bonds are compared with the observed results obtained by Ogihara et al. under pulsed illumination for high-quality hydrogenated amorphous silicon. Good agreement between calculations and experiments is obtained for the density of light-induced dangling bonds and its dependence on illumination time.