journal article·1998-05

Growth of microcrystalline silicon using the layer-by-layer technique at various plasma excitation frequencies

O Vetterl, P Hapke, F Finger, L Houben, M Luysberg, H Wagner

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (9)

Show source-provided references
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2. Luysberg · Phil. Mag. A · 1997 · 75 · 3110.1080/01418619708210280 ↗
3. Hapke · J. Non-Cryst. Solids · 1998 · 227–230 · 86110.1016/S0022-3093(98)00343-3 ↗
4. Asano · Appl. Phys. Lett. · 1990 · 56 · 53310.1063/1.102736 ↗
5. He · Jpn. J. Appl. Phys. · 1993 · 32 · 337010.1143/JJAP.32.3370 ↗
6. Hapke · Mater. Res. Soc. Proc. · 1997 · 452 · 727
7. Curtins · Plasma Chem. Plasma Processing · 1987 · 7 · 26710.1007/BF01016517 ↗
8. O. Vetterl, Diploma Thesis, University of Düsseldorf, Germany, 1997.
9. Houben · J. Non-Cryst. Solids · 1998 · 227–230 · 89610.1016/S0022-3093(98)00239-7 ↗