Effect of process parameters on the properties of electron cyclotron resonance plasma deposited silicon-oxynitride
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OpenAlex topics: Copper Interconnects and Reliability · Thin-Film Transistor Technologies · Semiconductor materials and devices
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References (13)
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1. Picraux · Mater. Res. Soc. Bull. · 1992 · 17 · 5210.1557/S088376940004166X ↗
2. Nguyen · J. Electron. Mater. · 1987 · 16 · 27510.1007/BF02653366 ↗
3. Bulkin · S. Afr. J. Phys. · 1993 · 16 · 33
4. Bulkin · Thin Solid Films · 1994 · 241 · 24710.1016/0040-6090(94)90434-0 ↗
5. Bulkin · Opt. Eng. · 1994 · 33 · 289410.1117/12.175695 ↗
6. Rosler · Solid State Technol. · 1991 · 34 · 67
7. Gorowitz · Solid State Technol. · 1987 · 30 · 9710.1016/0038-1101(87)90036-0 ↗
8. Asmussen · J. Vac. Sci. Technol. · 1989 · A7 · 88310.1116/1.575815 ↗
9. Matsuo · Jpn. J. Appl. Phys. · 1983 · 22 · L21010.1143/JJAP.22.L210 ↗
10. Shapoval · Vacuum · 1992 · 43 · 19510.1016/0042-207X(92)90260-4 ↗
11. 1988
12. Swanepoel · J. Phys. · 1983 · E16 · 1214
13. Schalch · Thin Solid Films · 1985 · 124 · 30110.1016/0040-6090(85)90280-9 ↗