Electronic mobility gap structure and the nature of deep defects in amorphous silicon-germanium alloys grown by photo-CVD
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Semiconductor Quantum Structures and Devices
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References (14)
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1. Aljishi · 1989
2. Chen · Phys. Rev. B · 1991 · 43 · 1169410.1103/PhysRevB.43.11694 ↗
3. Paul · J. Non-Cryst. Solids · 1991 · 137&138 · 80310.1016/S0022-3093(05)80242-X ↗
4. Albright · AIChE Journal · 1990 · 36 · 155510.1002/aic.690361011 ↗
5. Cohen · 1989
6. Cohen · Phys. Rev. B · 1982 · 25 · 532110.1103/PhysRevB.25.5321 ↗
7. Michelson · Appl. Phys. Lett. · 1985 · 47 · 41210.1063/1.96129 ↗
8. Bar-Yam · Phys. Rev. Lett. · 1986 · 57 · 46710.1103/PhysRevLett.57.467 ↗
9. Cohen · J. Non-Cryst. Solids · 1992 · 141 · 14210.1016/S0022-3093(05)80528-9 ↗
10. Unold · J. Non-Cryst. Solids · 1992 · 137&138 · 809
11. Stutzmann · Phil. Mag. B · 1989 · 60 · 53110.1080/13642818908205926 ↗
12. Street · Phil. Mag. · 1987 · B56 · 28910.1080/13642818708221318 ↗
13. Morin · 1992 · 258 · 577
14. T. Unold, to be published.