journal article·1993-12

Influence on the transport properties of the deposition temperature of a-Si:H films deposited from mixtures of silane in helium at high deposition rates

J.P. Kleider, C. Longeaud, P. Roca i Cabarrocas

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence

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References (7)

Show source-provided references
1. Roca i Cabarrocas · J. Phys. I France · 1992 · 2 · 197910.1051/jp1:1992260 ↗
2. Roca i Cabarrocas · J. Vac. Sci. Technol. · 1991 · A9 · 233110.1116/1.577318 ↗
3. Thèye · Phil. Mag. B · 1991 · 63 · 14310.1080/01418639108224435 ↗
4. Longeaud · Phys. Rev. B · 1992 · 45 · 1167210.1103/PhysRevB.45.11672 ↗
5. Kleider · J. Non Cryst. Solids · 1991 · 137 & 138 · 44710.1016/S0022-3093(05)80151-6 ↗
6. Longeaud · Phil. Mag. B · 1990 · 61 · 27710.1080/13642819008205526 ↗
7. Murayama · Solid State Commun. · 1992 · 81 · 88710.1016/0038-1098(92)90862-4 ↗