Optimization of the as-deposited 1.54 μm photoluminescence intensity in a-SiO :H〈Er〉

Abstract Erbium-doped a-Si:H has Er 3+ -related photoluminescence (PL) at ∼1.54 μm (∼0.8 eV). This emission is an intra-4f level transition of the Er 3+ ion, which can be increased by adding O. In this paper we present a study of the dependence of the Er 3+ luminescence on Er and O concentration ([Er] and [O]) in a-SiO x :H. Samples were prepared by rf-sputtering from a Si target partially covered by small erbium platelets in an Ar+H 2 +O 2 plasma. The maximum Er 3+ luminescence occurs when 10⩽[O]/[Er]⩽40. Up to 3 O atoms form the Er coordination shell. The extra O increases the excitation of the Er 3+ ions. When [O] increases and the density of states at mid-gap becomes larger than [Er], the Er 3+ excitation rate decreases. In optimized samples the temperature quenching is less than a factor 2 from 15 to 300 K. The data allow us to conclude that: (a) Efficient room temperature Er 3+ PL can be obtained from as-deposited a-SiO x :H(Er). (b) The role of O in a-SiO x :H(Er) is more than just providing non-centrosymmetric environments for Er 3+ . It also increases the Er 3+ excitation rate.