journal article·1985-12

Low pressure microwave glow discharge process for high deposition rate amorphous silicon alloy

S.J Hudgens, A.G Johncock, S.R Ovshinsky

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices

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References (11)

Show source-provided references
1. Hudgens · 1985
2. Mosburg · J. Appl. Phys. · 1983 · 54 · 491610.1063/1.332758 ↗
3. Chen · 1965
4. Ferreira · J. Phys. D · 1984 · 17 · 117510.1088/0022-3727/17/6/014 ↗
5. Vanier · J. Appl. Phys. · 1984 · 56 · 181210.1063/1.334191 ↗
6. Ross · J. Vac. Sci. Technol. · 1982 · 20 · 40610.1116/1.571478 ↗
7. Ross · J. Appl. Phys. · 1984 · 55 · 378510.1063/1.332935 ↗
8. Schmitt · J. Non-Cryst. Solids · 1983 · 59/60 · 64910.1016/0022-3093(83)90257-0 ↗
9. Turban · Plasma Chemistry and Plasma Processing · 1982 · 2 · 6110.1007/BF00566858 ↗
10. Kampas · Semiconductors and Semimetals · 1984 · 21A · 15310.1016/S0080-8784(08)63026-4 ↗
11. Ovshinsky · 1983 · 817