journal article·1996-05

Characteristics of the hot-wire CVD reactor on a-Si:H deposition

Naoto Tsuji, Tomoo Akiyama, Hiroshi Komiyama

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (11)

Show source-provided references
1. Staebler · Appl. Phys. Lett. · 1977 · 31 · 29210.1063/1.89674 ↗
2. Tsai · J. Appl. Phys. · 1986 · 59 · 299810.1063/1.336920 ↗
3. Mahan · J. Appl. Phys. · 1991 · 69 · 672810.1063/1.348897 ↗
4. Horbach · J. Non-Cryst. Solids · 1991 · 137–138 · 66110.1016/S0022-3093(05)80207-8 ↗
5. Matsuda · Surf. Sci. · 1990 · 227 · 5010.1016/0039-6028(90)90390-T ↗
6. Shimogaki · 1993 · 225
7. Koshi · J. Phys. Chem. · 1990 · 97 · 447310.1021/j100119a035 ↗
8. M. Koshi, private communication.
9. Coltorin · J. Electrochem. Soc. · 1989 · 136 · 81910.1149/1.2096750 ↗
10. Kee · Sandia Report SAND89-8009 · 1991
11. Gallagher · J. Appl. Phys. · 1988 · 63 · 240610.1063/1.341034 ↗