Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films
Source abstract
Abstract
Abstract We use electron spin resonance and current density versus electric field measurements to link silicon dangling bond defects, called E′ centers, to leakage currents in thin films of SiO2 on silicon.
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Research context
OpenAlex topics: Semiconductor materials and devices · Thin-Film Transistor Technologies · Phase-change materials and chalcogenides
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References (22)
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