journal article·1989-12

Raman scattering in a-Ge1−xSix:H alloys

F Li, J.S Lannin

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Phase-change materials and chalcogenides · Silicon Nanostructures and Photoluminescence

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References (12)

Show source-provided references
1. Shevchik · Phys. Rev. · 1973 · B7 · 398710.1103/PhysRevB.7.3987 ↗
2. Lannin · Phys. Rev. · 1977 · B16 · 151010.1103/PhysRevB.16.1510 ↗
3. Kshirsagar · Phys. Rev. · 1982 · B25 · 291610.1103/PhysRevB.25.2916 ↗
4. Maley · Physica · 1983 · 117B/118B · 880
5. Maley · Phys. Rev. · 1987 · B36 · 114610.1103/PhysRevB.36.1146 ↗
6. Lannin · 1974 · 1245
7. Yndurian · Phys. Rev. Lett. · 1976 · 37 · 106210.1103/PhysRevLett.37.1062 ↗
8. Bouchard · Phys. Rev. · 1988 · B38 · 1049910.1103/PhysRevB.38.10499 ↗
9. Maley · Phys. Rev. · 1988 · B38 · 1061110.1103/PhysRevB.38.10611 ↗
10. Barker · 1968 · 581
11. Maley · Phys. Rev. · 1987 · B35 · 2450
12. Li · Phys. Rev. · 1989 · B39 · 622010.1103/PhysRevB.39.6220 ↗