journal article·1980-01

Comparative study of amorphous III–V compounds

Adriana Gheorghiu, Marie-Luce Theye

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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces · Semiconductor materials and devices

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References (14)

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1. Effects of disorder on the electronic density of states of III–V compounds10.1103/PhysRevB.10.1545 ↗
2. Coordination and electronic states in amorphous III–V compounds
3. Amorphous semiconductors
4. Photoelectron spectroscopy of amorphous group IV and III–V semiconductors
5. Contribution à l'étude des couches minces par réflexion spéculaire de rayons X10.1088/0029-4780/3/1/307 ↗
6. Etude de la composition de couches minces de GaAs amorphe par analyse non dispersive de rayons X
7. Extended x-ray-absorption fine-structure technique. III. Determination of physical parameters10.1103/PhysRevB.11.4836 ↗
8. Pauling · 1960
9. The study of disordered systems by EXAFS: Limitations10.1016/0038-1098(79)90790-7 ↗
10. EXAFS of amorphous GaAs: Evidence for inequivalent environments of Ga and As10.1088/0022-3719/11/20/002 ↗
11. Relations between electronic properties and atomic structure of GaAs films
12. Optical properties of amorphous III–V compounds. I. Experiments10.1002/pssb.2220490213 ↗
13. Phillips · 1973
14. Electrical properties of amorphous InSb10.1103/PhysRevB.8.2678 ↗