A new physical-based compact model of floating-gate EEPROM cells
Source abstract
Abstract
A model for static and transient simulations of an electrically erasable programmable read-only memory (EEPROM) cell has been developed. This physical compact model is based on charge sheet approach which is able to describe the complete electrical properties of the cell. In this model the charge neutrality, including the charge trapped on the floating gate, is applied to determine the surface potential. From the surface potential, related to the terminal voltages, the drain current and the different charges present in the cell structure can be calculated. This model has been successfully implemented in common circuit simulators (Eldo and Saber) and used for the study of the write/erase operations in an EEPROM cell.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Low-power high-performance VLSI design
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References (7)
Show source-provided references
1. Lenzlinger · J. Appl. Phys. · 1969 · 40 · 27810.1063/1.1657043 ↗
2. Brews · Solid State Electron. · 1978 · 21 · 34510.1016/0038-1101(78)90264-2 ↗
3. Liong · IEEE Trans. Electron. Dev. · 1993 · 40 · 14610.1109/16.249437 ↗
4. Tsividis · 1999
5. R. Bouchakour, H. Recoules, W. Benzerti, H. Petit, in: Proceedings of the IEEE MWSCAS 97 Conference, Sacramento, 1997
6. N. Harabech, R. Bouchakour, P. Canet, Ph. Pannier, J.P. Sorbier, in: Proceedings of the IEEE ISCAS Conference, Geneve, 28 May 2000
7. P. Canet, R. Bouchakour, N. Harabech, Ph. Boivin, J.M Mirabel, C. Plossu, these Proceedings, p. 116