N-type doping in PECVD a-Si1−C :H obtained under `starving plasma' condition
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (8)
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5. R.J. Prado, D.R.S. Bittencourt, M.H. Tabacniks, M.C.A. Fantini, M.N.P. Carreño, I. Pereyra, Distribution of Pores in a-SiC:H Thin Films, J. Appl. Crystallogr. (1997) accepted for publication.
6. I. Pereyra, M.N.P. Carreño, R.J. Prado, M.H. Tabacniks, M.C.A. Fantini, The carbon incorporation in PECVD a-SiC:H in the low power density regime, Brazilian J. Phys. 27/A (4) (1997) 150–153.
7. Veerasamy · Phys. Rev. B · 1993 · 14 · 1795410.1103/PhysRevB.48.17954 ↗
8. Veerasamy · J. Phys. Condens. Matter · 1993 · 5 · L16910.1088/0953-8984/5/13/004 ↗