Ag–Sb–S amorphous chalcogenide thin films prepared by optically induced dissolution and diffusion of silver

Abstract The kinetics of optically induced dissolution and diffusion of silver in Sb33S67 films were measured by monitoring the change in thickness of the undoped chalcogenide using a modified computer-controlled reflectivity technique. Silver concentration was traced by the means of energy dispersion X-ray microanalyzer. The composition of the Sb–S films was chosen to be Sb33S67, which is the most favorable for optically induced solid-state reaction, because it yields homogeneous photodoped products. A new technique of step-by-step optically induced solid state reaction of Ag into Sb33S67 amorphous films, which has allowed the design of films with exact silver concentration and the study of their properties, is reported. The host Sb33S67 films were photodoped by dissolving a thin (∼60 nm) layer of silver, which resulted in homogeneous films of good optical quality. The silver concentration of the films ranged between 1 and 11 at.%. We have analyzed in detail the influence of the silver doping and its structure in the host material on optical properties. Analysis of the measurements have helped to understand the processes taking place during silver photodissolution.