journal article·1996-05

Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge

Toru Ikeda, Ian S. Osborne, Nobuhiro Hata, Akihisa Matsuda

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Photonic Crystals and Applications

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References (6)

Show source-provided references
1. Nakata · Appl. Phys. Lett. · 1994 · 65 · 194010.1063/1.112966 ↗
2. Azuma · 1994 · 89
3. Azuma · J. Non-Cryst. Solids · 1993 · 164–165 · 4710.1016/0022-3093(93)90488-J ↗
4. Osborne · Appl. Phys. Lett. · 1995 · 66 · 96510.1063/1.113612 ↗
5. Osborne · Jpn. J. Appl. Phys. · 1995 · 34 · L15910.1143/JJAP.34.L159 ↗
6. Osborne · Jpn. J. Appl. Phys. · 1995 · 34 · L53610.1143/JJAP.34.L536 ↗