Identification of the dominant electron deep trap in amorphous silicon from ESR and modulated photocurrent measurements: implications for defect models
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (12)
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1. Oheda · J. Appl. Phys. · 1981 · 52 · 669310.1063/1.328619 ↗
2. Schumm · Phys. Rev. B · 1989 · 39 · 531110.1103/PhysRevB.39.5311 ↗
3. Zhong · Phys. Rev. Lett. · 1993 · 71 · 59710.1103/PhysRevLett.71.597 ↗
4. Powell · Phys. Rev. B · 1993 · 48 · 1081510.1103/PhysRevB.48.10815 ↗
5. Schumm · Phys. Rev. B · 1994 · 49 · 242710.1103/PhysRevB.49.2427 ↗
6. Longeaud · Phys. Rev. B · 1996 · 53 · 1613310.1103/PhysRevB.53.R16133 ↗
7. Hattori · J. Non-Cryst. Solids · 1991 · 137–138 · 36310.1016/S0022-3093(05)80131-0 ↗
8. Han · Phys. Rev. B · 1993 · 48 · 865810.1103/PhysRevB.48.8658 ↗
9. Cohen · J. Non-Cryst. Solids · 1996 · 198–200 · 51210.1016/0022-3093(95)00744-X ↗
10. Brüggemann · Philos. Mag. B · 1990 · 62 · 2910.1080/13642819008205532 ↗
11. Lang · Phys. Rev. B · 1982 · 25 · 528510.1103/PhysRevB.25.5285 ↗
12. Cohen · J. Non-Cryst. Solids · 1995 · 190 · 12310.1016/0022-3093(95)00265-0 ↗