journal article·1989-12

Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge

P.Roca i Cabarrocas, J.Z. Liu, H.R. Park, A. Maruyama, S. Wagner

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (11)

Show source-provided references
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4. i Cabarrocas · 1986 · 533
5. i Cabarrocas · These Universite Paris VII · 1988
6. Wu Zongyan, A. Lloret, J.M. Siefert, P. Roca i Cabarrocas and B. Equer, MRS Sypm. Proc. Vol. 149, to be published.
7. Gallagher · J. Appl. Phys. · 1988 · 63 · 240610.1063/1.341034 ↗
8. Matsuda · J. Appl. Phys. · 1986 · 60 · 235110.1063/1.337144 ↗
9. Lin · J. Appl. Phys. · 1988 · 64 · 18810.1063/1.341461 ↗
10. A. Gallagher, D.A. Doughty and J.R. Doyle, Proc. of the 1989 Amorphous Silicon Subcontractors' Review Meeting, SERI, June 19–20, Goloden, Colorado.
11. Asano · J. of Non-Cryst. Solids · 1987 · 94 · 510.1016/S0022-3093(87)80254-5 ↗