Influence of hydrogen on the structural order of microcrystalline silicon during the growth process
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (17)
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1. Matsuda · J. Non-Cryst. Solids · 1983 · 59–60 · 76710.1016/0022-3093(83)90284-3 ↗
2. C.C. Tsai, Plasma deposition of amorphous and crystalline silicon: the effect of hydrogen on the growth, structure and electronic properties, in: H. Fritzsche (Ed.), Amorphous Silicon and Related Materials, Vol. 1, World Scientific Publisher: World Scientific, Singapore, 1988, pp. 123–147.10.1142/9789814434157_0006 ↗
3. Model for growth of a-Si:H and its alloys10.1103/PhysRevB.44.10610 ↗
4. Growth mechanism of microcrystalline silicon deposited by ECRCVD10.1557/PROC-452-773 ↗
5. Microstructures of low-temperature-deposited polycrystalline silicon with micrometer grains10.1063/1.359063 ↗
6. Bustarret · Appl. Phys. Lett. · 1988 · 40 · 167510.1063/1.99054 ↗
7. P. Hapke, VHF-Plasmaabscheidung von mikrokristallinem Silizium: Einfluß der Plasmafrequenz auf die strukturellen und elektrischen Eigenschaften, in: Mathematisch-Naturwissenschaftliche Fakultät, Technische Hochschule, Aachen, 1995.
8. Phonon mode study of Si nanocrystals using micro-Raman spectroscopy10.1063/1.360494 ↗
9. P. Roca i Cabarrocas, N.L., B. Drevillon, I. Solomon, Microcrystalline silicon growth by the layer-by-layer technique: long-term evolution and nucleation mechanisms, J. Non-Cryst. Solids (1996) 871–874.10.1016/0022-3093(96)00073-7 ↗
10. W. Futako, K.Y., K. Nakamura, C.M. Fortmann, I. Shimizu, Fabrication of high-quality silicon-related films with band-gab of 1.5 eV by chemical annealing, J. Non-Cryst. Solids (1996) 1046–1049.10.1016/0022-3093(96)00037-3 ↗
11. Byun · Mater. Res. Soc. Symp. Proc. · 1995 · 337 · 7510.1557/PROC-377-75 ↗
12. Neitzert · J. Appl. Phys. · 1995 · 78 · 143810.1063/1.360302 ↗
13. Johnson · Phys. Rev. B · 1987 · 35 · 416610.1103/PhysRevB.35.4166 ↗
14. Nickel · Solid State Commun. · 1996 · 99 · 42710.1016/0038-1098(96)00283-9 ↗
15. R.A. Street, Hydrogen in Amorphous Silicon, Cambridge Univ. Press, Cambridge, 1991, 57 pp.10.1017/CBO9780511525247 ↗
16. Hydrogen migration in polycrystalline silicon10.1103/PhysRevB.53.7750 ↗
17. Hydrogen-mediated creation and annihilation of strain in amorphous silicon10.1103/PhysRevB.51.4872 ↗