Fabrication of nanometer sized Si dot multilayers and their photoluminescence properties

Abstract Silicon nanometer sized dot multilayers have been prepared by repeating low-pressure chemical vapor deposition (LPCVD) for dot formation and thermal oxidation for dot isolation. The multilayers show efficient photoluminescence after annealing at 1000°C, which reduces Si dangling bond density measured by electron spin resonance (ESR). The measured luminescence peak energy shifts from 1.25 to 1.64 eV as the dot height decreases from 15 to