journal article·1997-08

H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures

K. Vanheusden, W.L. Warren, R.A.B. Devine

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Ion-surface interactions and analysis · Silicon Nanostructures and Photoluminescence

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References (8)

Show source-provided references
1. Sze · 1981
2. Brower · Phys. Rev. · 1992 · B42 · 3444
3. Cartier · Appl. Phys. Lett. · 1993 · 63 · 151010.1063/1.110758 ↗
4. Stahlbush · 1996 · Vol. 3 · 525
5. Saks · IEEE Trans. Nucl. Sci. · 1989 · NS36 · 184810.1109/23.45378 ↗
6. Brown · J. Appl. Phys. · 1991 · 70 · 373410.1063/1.349226 ↗
7. Saks · IEEE Trans. Nucl. Sci. · 1992 · 39 · 222010.1109/23.211424 ↗
8. Electrical Characterisation of Silicon on Insulator Materials and Devices