journal article·1983-12

Photoelectrical and optical study of p-type a-Si:H used as a photoreceptor

A. Tříska, I. Shimizu, J. Kočka, L. Tichý, M. Vaněček

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Transition Metal Oxide Nanomaterials

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References (10)

Show source-provided references
1. Oda · J. Appl. Phys. · 1981 · 52 · 727510.1063/1.328714 ↗
2. Haruki · Solar Energy Materials · 1983 · 8 · 44110.1016/0165-1633(83)90008-4 ↗
3. Yamasaki · Japan. J. Appl. Phys. · 1982 · 21 · 178910.1143/JJAP.21.1789 ↗
4. Jackson · Phys. Rev. · 1982 · B25 · 555910.1103/PhysRevB.25.5559 ↗
5. Vaněček · Solar Energy Materials · 1983 · 8 · 41110.1016/0165-1633(83)90006-0 ↗
6. J.Kočka, M.Vaněček, Z.Kožíšek, O.Štika, J.Beichler, Comparison of the density of gap states in a-Si:H found by different methods, this volume.
7. Nagels · phys. stat. sol. (a) · 1983
8. Vaněček · phys. stat. sol. (b) · 1983
9. Tiedje · Phys. Rev. Lett. · 1981 · 46 · 142510.1103/PhysRevLett.46.1425 ↗
10. Redfield · Solid State Commun. · 1982 · 44 · 134710.1016/0038-1098(82)90890-0 ↗