Comparison of the density of gap states in a-Si:H found by different methods
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Semiconductor materials and interfaces
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References (14)
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1. Kočka · 1982 · 443
2. Vaněček · Solar Energy Materials · 1983 · 8 · 41110.1016/0165-1633(83)90006-0 ↗
3. Yamasaki · Japan J. Appl. Phys. · 1982 · 21 · L53910.1143/JJAP.21.L539 ↗
4. Jackson · Phys. Rev. · 1983 · B27 · 486110.1103/PhysRevB.27.4861 ↗
5. Grimmeiss · J. Appl. Phys. · 1975 · 46 · 215510.1063/1.321858 ↗
6. Moddel · Phys. Rev. · 1980 · B22 · 191810.1103/PhysRevB.22.1918 ↗
7. Beichler · 1982 · 537
8. J.Beichler, H. Mell and K. Weber, Density of gap states in n and p type a-Si:H, this conference
9. Jackson · 1982
10. Tiedje · Phys. Rev. Lett. · 1981 · 46 · 142510.1103/PhysRevLett.46.1425 ↗
11. Jackson · Phys. Rev. · 1982 · B25 · 555910.1103/PhysRevB.25.5559 ↗
12. Lang · Phys. Rev. · 1982 · B25 · 528510.1103/PhysRevB.25.5285 ↗
13. Mackenzie · Phil. Mag. · 1982 · B46 · 37710.1080/13642818208246448 ↗
14. Okushi · Phys. Rev. · 1983 · B27 · 518410.1103/PhysRevB.27.5184 ↗