Determination of hydrogen concentration depth profiles in a-Si:H by Secondary Neutral Mass Spectrometry (SNMS)
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OpenAlex topics: Thin-Film Transistor Technologies · Ion-surface interactions and analysis · Silicon and Solar Cell Technologies
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References (5)
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1. Oechsner · Nucl. Instrum. and Methods · 1988 · B33 · 91810.1016/0168-583X(88)90710-0 ↗
2. Rübel · J. Vac. Sci. Technol. · 1986 · A4 · 185510.1116/1.573777 ↗
3. Jede · J. Vac. Sci. Technol. · 1988 · A6 · 227110.1116/1.575023 ↗
4. Wucher · J. Vac. Sci. Technol. · 1988 · A6 · 229310.1116/1.575026 ↗
5. Secondary Ion Mass Spectroscopy SIMS III