journal article·1995-07

Control of bonded-hydrogen in plasma-deposited silicon nitrides: Combined plasma-assisted deposition and rapid thermal annealing for the formation of device-quality nitride layers for applications in multilayer dielectrics

Z. Lu, S.S. He, Y. Ma, G. Lucovsky

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence

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References (8)

Show source-provided references
1. Ma · J. Vac. Sci. Technol. · 1994 · B12 · 250410.1116/1.587792 ↗
2. Ma · J. Vac. Sci. Technol. · 1993 · B11 · 153310.1116/1.586965 ↗
3. Yasuda · Appl. Phys. Lett. · 1992 · 60 · 43410.1063/1.106626 ↗
4. He · 1993 · 284 · 413
5. Lucovsky · Microelectron. Eng. · 1994 · 25 · 32910.1016/0167-9317(94)90033-7 ↗
6. Lucovsky · 1993 · 284 · 34
7. Robertson · Philos. Mag. · 1991 · B63 · 4710.1080/01418639108224430 ↗
8. Lucovsky · Mater. Res. Soc. Spring MRS · 1994