journal article·1998-05

Existence of surface region with high dangling bond density during a-Si:H film growth

S Yamasaki, T Umeda, J Isoya, K Tanaka

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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