journal article·1984-07

Differences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H

G. Lucovsky, S.S. Chao, J. Yang, J.E. Tyler, W. Czubatyj

Journal of Non-Crystalline Solids· Volume 66· Issue 1-2
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence

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References (10)

Show source-provided references
1. Lucovsky · Solar Energy Mat. · 1982 · 8 · 16510.1016/0165-1633(82)90060-0 ↗
2. Lucovsky · Phys Rev · 1983 · B28 · 322510.1103/PhysRevB.28.3225 ↗
3. Lucovsky · Phys Rev · 1983 · B28 · 323410.1103/PhysRevB.28.3234 ↗
4. Lucovsky · Phys Rev · 1984 · B29 · 230210.1103/PhysRevB.29.2302 ↗
5. Pollard · Phys Rev · 1982 · B26 · 4288
6. Connell · Phys Rev · 1976 · B13 · 78710.1103/PhysRevB.13.787 ↗
7. Chao · Bull Am Phys Soc · 1984 · 29 · 425
8. Galeener · Phys Rev Lett · 1976 · 37 · 141410.1103/PhysRevLett.37.1474 ↗
9. Rochow · 1973 · Vol 1 · 1323
10. Germanium