A new treatment of Schottky barrier capacitance-voltage characteristics: Discussion of usual assumptions and determination of the deep gap states density in a-Si1−xGex:H alloys
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OpenAlex topics: Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis · Silicon Nanostructures and Photoluminescence
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References (11)
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1. Viktorovitch · J. Appl. Phys. · 1980 · 51 · 484710.1063/1.328319 ↗
2. Lang · Phys. Rev. · 1982 · B25 · 528510.1103/PhysRevB.25.5285 ↗
3. Suzuki · Jpn. J. Appl. Phys. · 1983 · 22 · 78510.1143/JJAP.22.785 ↗
4. Gibb · Phil. Mag. · 1984 · B49 · 56510.1080/13642818408227646 ↗
5. Mencaraglia · J. Appl. Phys. · 1985 · 58 · 129210.1063/1.336097 ↗
6. Balberg · J. Appl. Phys. · 1985 · 58 · 260310.1063/1.335890 ↗
7. Okushi · Phil. Mag. · 1985 · B52 · 3310.1080/13642818508243164 ↗
8. Archibald · Phil. Mag. · 1986 · B54 · 42110.1080/13642818608236858 ↗
9. Metal-Semiconductor Contacts
10. Mencaraglia · 1989
11. C. Godet, A. Ladi, J.P. Kleider, D. Mencaraglia and Z. Djebbour, this volume.