journal article·1990-12

Hydrogen anneal of E′ centers in thermal SiO2 on Si

Zheng Li, S.J. Fonash, E.H. Poindexter, M. Harmatz, F. Rong, W.R. Buchwald

Journal of Non-Crystalline Solids· Volume 126· Issue 1-2
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Thin-Film Transistor Technologies

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References (15)

Show source-provided references
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9. Moulson · Trans. Br. Ceram. Soc. · 1960 · 59 · 388
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12. Devine · Phys. Rev. · 1987 · B35 · 978310.1103/PhysRevB.35.9783 ↗
13. MOS (Metal-Oxide-Semiconductor) Physics and Technology
14. The Chemistry of Silica
15. Lee · J. Chem. Phys. · 1961 · 36 · 106210.1063/1.1732632 ↗