journal article·1983-12

Amorphous Si prepared in a UHV plasma deposition system

C.C. Tsai, J.C. Knights, R.A. Lujan, B. Wacker, B.L. Stafford, M.J. Thompson

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Silicon Carbide Semiconductor Technologies

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References (4)

Show source-provided references
1. Delahoy · J. Appl. Phys. · 1981 · 52 · 633710.1063/1.328576 ↗
2. J. C. Knights, in: The Physics of Amorphous Silicon and its Applications, Vol. I, (Springer-Verlag, to be published).
3. O. Tsuji and T. Tatsuta, in: Proceedings of the 6th International Symposium on Plasma Chemistry, Vol. 3, eds. M. I. Boulons and R. J. Munz, pp. 782–786.
4. Knights · 1976 · 296