journal article·1987-12

Valency control of P-type a-SiC:H having the optical band gap more than 2.5 eV by electron-cyclotron resonance CVD (ECR CVD)

Yutaka Hattori, Dusit Kruangam, Toshihiko Toyama, Hiroaki Okamoto, Yoshihiro Hamakawa

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Thin-Film Transistor Technologies · Semiconductor materials and devices

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References (3)

Show source-provided references
1. Hattori · 1987
2. Nonomura · Appl. Phys. A · 1983 · 32 · 3110.1007/BF00626131 ↗
3. D. Kruangam, T. Toyama, Y. Hattori, M. Deguchi, H. Okamoto and Y. Hamakawa: this volume.