journal article·1987-12

Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD)

G.N. Parsons, D.V. Tsu, G. Lucovsky

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Silicon Nanostructures and Photoluminescence

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References (9)

Show source-provided references
1. Knights · Critical Reviews in Solid State and Materials Science · 1980 · 9 · 210
2. Thompson · 1984 · 119
3. Lucovsky · J Vac Sci Technol A · 1986 · 3 · 68110.1116/1.573832 ↗
4. G Lucovsky and DV Tsu, these proceedings.
5. DV Tsu and G Lucovsky, these proceedings.
6. Fritzsche · Solar Energy Mat · 1980 · 3 · 44710.1016/0165-1633(80)90001-5 ↗
7. Parsons · J Vac Sci Tech A · 1987 · 510.1116/1.574541 ↗
8. Toyoshima · Appl Phys Lett · 1985 · 46 · 58410.1063/1.95914 ↗
9. Lucovsky · Phys Rev B · 1979 · 19 · 206410.1103/PhysRevB.19.2064 ↗