Low band gap amorphous silicon deposited under He dilution in the γ regime of an rf glow discharge: properties and stability
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Diamond and Carbon-based Materials Research
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References (7)
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1. Tsuo · 1991 · 21
2. Middya · J. Appl. Phys. · 1993 · 73 · 462210.1063/1.352756 ↗
3. Kleider · 1995 · Vol. 44–46 · 597
4. Böhm · J. Phys. D Appl. Phys. · 1991 · 24 · 86510.1088/0022-3727/24/6/011 ↗
5. Hazra · J. Appl. Phys. · 1995 · 78 · 58110.1063/1.360575 ↗
6. Ray · 1994
7. Kleider · J. Appl. Phys. · 1995 · 78 · 31710.1063/1.360678 ↗