Ab initio study of the structure and properties of amorphous silicon hydride from accelerated molecular dynamics simulations
Source abstract
Abstract
This paper presents a large-scale $ab$ $initio$ simulation study of amorphous silicon hydride ($a$-Si$_{\text{1-x}}$H$_{\text{x}}$) with an emphasis on the structure and properties of the material across a range of hydrogen concentration by combining accelerated molecular dynamics (MD) simulations with first-principles density-functional calculations. The accelerated MD scheme relied on classical metadynamics, which enabled the development of 2600+ high-quality structural models of $a$-Si$_{\text{1-x}}$H$_{\text{x}}$, with system sizes ranging from 150 to 6,000 atoms and hydrogen concentrations vary from 6 to 20 at. %H. The resulting amorphous networks were found to be completely free from any coordination defects and that they all exhibited a pristine band-gap in their electronic spectrum. The microstructural properties of hydrogen distributions were examined with great emphasis on the presence of isolated and clustered environments of hydrogen atoms. The results were compared with a suite of experimental data obtained from x-ray diffraction, infrared spectroscopy, spectroscopic ellipsometry and nuclear magnetic resonance studies.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Glass properties and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (68)
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1. Record efficiency hit solar cell on thin silicon wafer10.1109/JPHOTOV.2013.2282737 ↗
2. World’s largest amorphous silicon photovoltaic module10.1016/j.tsf.2005.08.011 ↗
3. Development status of high-efficiency hit solar cells10.1016/j.solmat.2010.04.030 ↗
4. Reversible conductivity changes in discharge-produced amorphous Si10.1063/1.89674 ↗
5. Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon10.1063/1.328084 ↗
6. Experimentally constrained molecular relaxation: The case of hydrogenated amorphous silicon10.1103/PhysRevB.76.125210 ↗
7. Metadynamical approach to the generation of amorphous structures: The case of a-Si:H10.1103/PhysRevB.93.184202 ↗
8. Morphology and number density of voids in hydrogenated amorphous silicon: An ab initio study10.1103/PhysRevApplied.7.024013 ↗
9. Vacancies, microstructure and the moments of nuclear magnetic resonance: the case of hydrogenated amorphous silicon
10. Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: a first-principles study10.1039/C9NR08209C ↗
11. Ab initio hydrogen dynamics and the morphology of voids in amorphous silicon10.1002/pssb.202170047 ↗
12. Tight-binding model for hydrogen-silicon interactions10.1103/PhysRevB.45.6839 ↗
13. Model of hydrogenated amorphous silicon and its electronic structure10.1103/PhysRevB.47.3991 ↗
14. Energetics of hydrogen in amorphous silicon: An ab initio study10.1103/PhysRevB.57.12859 ↗
15. Structure of hydrogenated amorphous silicon from ab initio molecular dynamics10.1103/PhysRevB.44.5908 ↗
16. First-principles study of hydrogenated amorphous silicon10.1103/PhysRevB.79.155206 ↗
17. Finite-temperature properties of amorphous silicon10.1103/PhysRevLett.67.2179 ↗
18. Tight-binding molecular-dynamics study of a-Si:H: Preparation, structure, and dynamics10.1103/PhysRevB.60.5478 ↗
19. Realistic atomistic structure of amorphous silicon from machine-learning-driven molecular dynamics10.1021/acs.jpclett.8b00902 ↗
20. Reverse Monte Carlo modeling of amorphous silicon10.1103/PhysRevB.69.195207 ↗
21. Reverse Monte Carlo modeling of amorphous germanium10.1103/PhysRevB.53.2405 ↗
22. Disorder by design: A data-driven approach to amorphous semiconductors without total-energy functionals10.1038/s41598-020-64327-3 ↗
23. Experimentally constrained molecular relaxation: The case of glassy GeSe210.1103/PhysRevB.71.054204 ↗
24. Inversion of diffraction data for amorphous materials10.1038/srep33731 ↗
25. Force-enhanced atomic refinement: Structural modeling with interatomic forces in a reverse monte carlo approach applied to amorphous Si and SiO210.1103/PhysRevB.92.155205 ↗
26. Information-driven inverse approach to disordered solids: Applications to amorphous silicon
27. Nanoscale structure of microvoids in a-Si:H: A first-principles study
28. 1H NMR in a-Si10.1103/PhysRevB.26.3605 ↗
29. Proton magnetic resonance spectra of plasma-deposited amorphous Si: H films10.1103/PhysRevLett.44.193 ↗
30. Deuteron and proton magnetic resonance in a-Si:(DH)10.1103/PhysRevB.26.6053 ↗
31. Multiple-quantum NMR study of clustering in hydrogenated amorphous silicon10.1103/PhysRevLett.56.1377 ↗
32. Infrared absorption in a-Si:H: First observation of gaseous molecular H2 and Si-H overtone10.1103/PhysRevLett.53.210 ↗
33. Si-H bond dynamics in hydrogenated amorphous silicon10.1103/PhysRevB.76.054301 ↗
34. Dielectric function of a-Si:H based on local network structures10.1103/PhysRevB.83.195205 ↗
35. Measurement of phonon densities of states for pure and hydrogenated amorphous silicon10.1103/PhysRevLett.52.644 ↗
36. Laio · Proc. Natl. Acad. Sci. USA · 2002 · 99 · 1256210.1073/pnas.202427399 ↗
37. A numerical approach to the testing of the fission hypothesis10.1086/112164 ↗
38. If L is normalized (that is ∫Ldx=1 in 1D, ∬Ldxdy=1 in 2D, and ∭Ldxdydz=1 in 3D), then A=5/(4w) in 1D, A=5/(πw2) in 2D, and A=105/(16πw3) in 3D.
39. The relation between σ and w is based on the condition that L and g both have the same full width at half maximum (FWHM).
40. Nearly defect-free dynamical models of disordered solids: The case of amorphous silicon10.1063/1.5021813 ↗
41. Computer simulation of local order in condensed phases of silicon10.1103/PhysRevB.31.5262 ↗
42. Fitting the stillinge-weber potential to amorphous silicon10.1016/S0022-3093(01)00342-8 ↗
43. Since metadynamics is a nonequilibrium simulation technique, one cannot define simulation temperatures as in conventional MD using the classical equipartition theorem. It is more appropriate to regard the temperature as a simulation parameter that determines the degree of ruggedness of a free-energy surface defined by a given set of collective variables. A high temperature corresponds to a less rugged landscape, and vice versa.
44. Relation of the Si-H stretching frequency to the nanostructural SiH bulk environment10.1103/PhysRevB.76.073202 ↗
45. The siesta method for ab initio order- n materials simulation
46. Simplified method for calculating the energy of weakly interacting fragments10.1103/PhysRevB.31.1770 ↗
47. Systematic study of electron localization in an amorphous semiconductor10.1103/PhysRevB.69.085207 ↗
48. Ground state of the electron gas by a stochastic method10.1103/PhysRevLett.45.566 ↗
49. Efficient pseudopotentials for plane-wave calculations10.1103/PhysRevB.43.1993 ↗
50. Hydrogen microstructure in hydrogenated amorphous silicon10.1103/PhysRevB.54.17759 ↗
51. Diffusion and evolution of hydrogen in hydrogenated amorphous and microcrystalline silicon10.1016/S0927-0248(02)00438-5 ↗
52. High-energy x-ray diffraction study of pure amorphous silicon10.1103/PhysRevB.60.13520 ↗
53. In the literature of a-Si, one occasionally compares the experimental value of the average coordination number of 3.88 from Ref. [52] with the calculated value obtained from integrating the first peak of the PCF of computer-generated models. However, for finite-size models, such a comparison is ill-advised as it may lead to a considerable presence of isolated dangling bonds in amorphous networks, which results in a pseudo-gap or gapless electronic spectrum.
54. High resolution radial distribution function of pure amorphous silicon10.1103/PhysRevLett.82.3460 ↗
55. Street · 1991
56. Extended-range order in tetrahedral amorphous semiconductors: The case of amorphous silicon10.1103/PhysRevB.105.115203 ↗
57. Neutron scattering studies of hydrogenated, deuterated and fluorinated amorphous silicon
58. For a binary system, the neutron-weighted total PCF, g(r), is given by g(r)=∑ijωijgij, where ωij are the scale factors involving concentrations and neutron scattering factors. See Ref. [68] for details.
59. Structural information from the raman spectrum of amorphous silicon10.1103/PhysRevB.32.874 ↗
60. Changes in the vacancy size distribution induced by non-bonded hydrogens in hydrogenated amorphous silicon10.1016/j.jnoncrysol.2016.05.030 ↗
61. The radius and the number of H atoms used here to define a hydrogen cluster are mostly guided by the results from NMR experiments. One typically chooses a value of 4–5 Å for radius and 5–7 H atoms to define a cluster. Although the clusters are not unique, the total number of H atoms in a clustered environment remains more or less the same for a given radius and a minimum cluster size.
62. The dipolar broadening of magnetic resonance lines in crystals10.1103/PhysRev.74.1168 ↗
63. Abragam · 1994
64. A study of hydrogen microstructure in amorphous silicon via inversion of nuclear magnetic resonance spectra
65. Optical properties and electronic structure of amorphous germanium10.1002/pssb.19660150224 ↗
66. Optical properties and electronic structure of amorphous Ge and Si10.1016/0025-5408(68)90023-8 ↗
67. Morigaki · 1991
68. Elliott · 1988