Modifications of the optical parameters of silicon thin films due to light scattering

Abstract The enhanced light absorption observed in microcrystalline and polymorphous hydrogenated silicon films may partly be due to light scattering. To estimate the importance of this phenomenon, we used the new `photocurrent induced by light scattering' method. The exciting beam is impinging on the sample outside the inter-electrode region; by changing the position of the exciting light spot and the photon energy, it is possible to estimate the light scattering effects. We applied this method to films of different materials and checked our conclusions by using the modified constant photocurrent method.