Optical and electronic properties of Ge–Sb–Te films
Source abstract
Abstract
Abstract Amorphous films of Ge2Sb2Te5 and Ge2Sb2Te7 were grown to a thickness between 0.5 and 4 μm using RF Sputtering. We examined the effects of growth rate, oxygen impurities and substrate temperature on the optical and electronic properties.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Glass properties and applications
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References (5)
Show source-provided references
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3. Maimon · AIP Conf. Proc. · 2004 · 699 · 63910.1063/1.1649626 ↗
4. Olson · J. Ovonic Res. · 2005 · 1 · 1
5. J.K. Olson, H. Li , T. Ju, M.C. Delong, P.C. Taylor, J. Appl. Phys., in press.