journal article·1997-08

Si3N4 thickness and its oxidation time influence on O/N/O DRAM cell performance

Luciano Grifoni, Paolo Massimi, Fabrizio Fama'

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Anodic Oxide Films and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (13)

Show source-provided references
1. Morie · IEEE Electron. Device Lett. EDL-4 · 1983 · 41110.1109/EDL.1983.25783 ↗
2. Prince · 1991
3. Chatterjee · IEEE Trans. Electron. Devices ED-26 · 1979 · 56410.1109/T-ED.1979.19461 ↗
4. Kolbesen · 1991 · 371
5. Extended Abstracts
6. Kim · J. Electrochem. Soc. · 1994 · 141 · 187210.1149/1.2055020 ↗
7. Tanaka · IEEE Trans. Electron. Devices · 1993 · 40 · 223110.1109/16.249470 ↗
8. Belvy · 1988
9. Alfonsetti · Adv. X-ray anal. · 1995 · 26s · 145
10. Nakayama · Jpn. J. Appl. Phys. · 1982 · 18 · 177310.1143/JJAP.18.1773 ↗
11. Bailey · J. Vac. Sci. Technol. · 1982 · 20 · 48410.1116/1.571341 ↗
12. Pan · J. Electrochem. Soc. · 1985 · 132 · 300110.1149/1.2113711 ↗
13. Trolier-McKinstry · J. Electrochem. Soc. · 1994 · 141 · 248310.1149/1.2055147 ↗