Photo- and thermo-induced changes in As-S-Se chalcogenide thin films
Source abstract
Abstract
Abstract Compositional dependences of glass transition temperature T g , optical properties and structure of As 35 S 65 − x Se x thin films are studied in this paper. Changes of studied optical properties induced either by exposure to polychromatic light or annealing are also studied together with in-situ kinetics measurement. It was found that in comparison with annealing exposure to polychromatic light induces more significant changes in optical properties as a result of more significant internal structural changes which were confirmed by Raman spectroscopy.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Optical and Acousto-Optic Technologies
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References (29)
Show source-provided references
1. Tanaka · 2011
2. Adam · 2013
3. Selective wet etching of amorphous As2Se3 thin films10.1016/j.jnoncrysol.2015.09.021 ↗
4. Determination of the thickness and optical constants of amorphous silicon10.1088/0022-3735/16/12/023 ↗
5. Optical properties of amorphous semiconductors10.1007/978-1-4615-8705-7_4 ↗
6. Behavior of the electronic dielectric constant in covalent and ionic materials10.1103/PhysRevB.3.1338 ↗
7. Optical fibers based on As–S–Se glass system10.1016/S0022-3093(01)00394-5 ↗
8. Non-linear optical properties of chalcogenide glasses in the system As–S–Se10.1016/S0022-3093(99)00524-4 ↗
9. Shiryaev, S. V. Mishinov, S. V. Churbanov, M. F. Investigation of adhesion of chalcogenide glasses to silica glass, J. Non-Cryst. Solids, Vol. 408, 2015, p. 71–7510.1016/j.jnoncrysol.2014.10.010 ↗
10. Vlček, M., Stronski, A.V., Sklenař, A., Wagner, T., Kasap, S.O. Structure and imaging properties of As40S60−xSex glasses, J. Non-Cryst. Solids, Vol. 266–269, 2000, str. 964–968.10.1016/S0022-3093(00)00038-7 ↗
11. Borisova · 1981
12. Refractive-index dispersion and optical-absorption edge of physically vapor-deposited films of the As35S65 chalcogenide glass10.1016/0167-577X(93)90120-M ↗
13. Optical characterization of thin chalcogenide films by multiple-angle-of-incidence ellipsometry10.1016/j.tsf.2009.09.002 ↗
14. Photoinduced changes in the linear and non-linear optical properties of chalcogenide glasses10.1016/S0022-3093(99)00330-0 ↗
15. Optical properties and photoinduced changes in amorphous As-S films10.1016/0040-6090(80)90381-8 ↗
16. Optical band gap and refractive index dispersion parameters of AsxSe70Te30−x (0≤x≤30at.%) amorphous films10.1007/s00339-010-5680-6 ↗
17. The structure of AsxS100−x glasses studied by temperature-modulated differential scanning calorimetry and Raman spectroscopy10.1016/S0022-3093(98)00194-X ↗
18. Popescu · 2000
19. Magnetic resonance study of arsenic bonding sites in ternary chalcogenide glass10.1016/j.ssc.2011.06.040 ↗
20. Structural characterization of As–Se–Te glasses10.1016/j.jallcom.2010.09.104 ↗
21. Raman spectra and photostructural changes in the short-range order of amorphous As-S chalcogenides10.1016/S0022-3093(99)00454-8 ↗
22. Structure and bonding in the mixed chalcogenide system As2SxSe3−x10.1016/0022-3093(83)90302-2 ↗
23. Raman scattering of the mixed chalcogenide system As2SxSe3−x10.1016/0022-3093(83)90309-5 ↗
24. Structure and vibrational modes of As-S-Se glasses: Raman scattering and Ab initio calculations10.1016/j.phpro.2013.07.010 ↗
25. Comparison of structural transformations in bulk and as-evaporated optical media under action of polychromatic or photon-energy dependent monochromatic illumination10.1002/pssc.201084058 ↗
26. Origin of the frequency shift of Raman scattering in chalcogenide glasses10.1016/j.jnoncrysol.2014.03.021 ↗
27. Study of As50Se50 thin film photo darkening induced by multiple wavelength beams
28. The origin of stretched exponential function in dynamic response of photodarkening in amorphous chalcogenides10.1063/1.3197631 ↗
29. Temperature dependence of the electronic gaps of semiconductors10.1016/j.tsf.2013.10.157 ↗