Defect pool model of defect formation in a-Si:H
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Surface Roughness and Optical Measurements
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References (10)
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2. Winer · Phys. Rev. · 1990 · B41 · 1215010.1103/PhysRevB.41.12150 ↗
3. NV0 = 2×1020 cm−3eV−1, E0 = 0.045 eV, ED0 = 0.6 eV, [H] = 5×1021 cm−3, EP = 0.9 eV, σ = 0.12 eV, and U = 0.2 eV.
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10. Zafar · Phys. Rev. Lett. · 1991 · 66 · 149310.1103/PhysRevLett.66.1493 ↗